Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. dependence of DIBL lattice temperature middle channel gate length considered for transistors with different oxide back (BOX) materials. effects Al2O3 HfO2 SiO2 BOX materials compared. Transistors, which fully partially (i.e., just below gate) covered by a oxide, considered. It shown that have higher immunity to SHE.